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Source engineering on Oxygen-Inserted Si channel for gate l..:

, In: 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Chen, Yi-Ann ; Hong, Changsoo ; Li, Shuyi... - p. 197-200 , 2022
Link: https://doi.org/10.1109/ISPSD49238.2022.9813686