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1 Ergebnisse
1
Effect of Epitaxial Layer Parameters on the Avalanche Energ..:
, In:
2022 IEEE 5th International Conference on Electronics Technology (ICET)
,
Li, Changze
;
Ren, Min
;
Tao, Lin
... - p. 215-219 , 2022
Link:
https://doi.org/10.1109/ICET55676.2022.9824291
RT T1 <cTitle>2022 IEEE 5th International Conference on Electronics Technology (ICET)</cTitle>: T1 <Title>Effect of Epitaxial Layer Parameters on the Avalanche Energy of Power VDMOS</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9824291&Exemplar=1&LAN=DE A1 Li, Changze A1 Ren, Min A1 Tao, Lin A1 Zhang, Xin A1 Yu, Shiheng A1 Lai, Xinzhang A1 Zhuo, Ningze A1 Zhang, Bo YR 2022 SN 2768-6515 K1 Epitaxial layers K1 Semiconductor device reliability K1 Switches K1 Conductivity K1 Turning K1 Semiconductor process modeling K1 Transistors K1 unclamped inductive switching K1 epitaxial layer K1 VDMOS K1 reliability SP 215 OP 219 LK http://dx.doi.org/https://doi.org/10.1109/ICET55676.2022.9824291 DO https://doi.org/10.1109/ICET55676.2022.9824291 SF ELIB - SuUB Bremen
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