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1 Ergebnisse
1
Study on the Dynamic Ron Degradation in GaN-based Power HEM:
, In:
2022 IEEE 5th International Conference on Electronics Technology (ICET)
,
Zhang, Jiaoqi
;
Sun, Shaoyu
;
Xia, Ling
.. - p. 169-172 , 2022
Link:
https://doi.org/10.1109/ICET55676.2022.9825118
RT T1
2022 IEEE 5th International Conference on Electronics Technology (ICET)
: T1
Study on the Dynamic Ron Degradation in GaN-based Power HEMT
UL https://suche.suub.uni-bremen.de/peid=ieee-9825118&Exemplar=1&LAN=DE A1 Zhang, Jiaoqi A1 Sun, Shaoyu A1 Xia, Ling A1 Wu, Wengang A1 Jin, Yufeng YR 2022 SN 2768-6515 K1 Resistance K1 Degradation K1 Semiconductor device measurement K1 Conferences K1 Voltage K1 Logic gates K1 HEMTs K1 GaN HEMT K1 dynamic Ron K1 deep levels K1 charge trapping SP 169 OP 172 LK http://dx.doi.org/https://doi.org/10.1109/ICET55676.2022.9825118 DO https://doi.org/10.1109/ICET55676.2022.9825118 SF ELIB - SuUB Bremen
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