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1 Ergebnisse
1
Ultra-Low On-Resistance TG-LDMOS With Three Separated Gates..:
, In:
2022 IEEE 5th International Conference on Electronics Technology (ICET)
,
Jia, Chen
;
Li, Xianglong
;
Sun, Yabin
... - p. 48-51 , 2022
Link:
https://doi.org/10.1109/ICET55676.2022.9825250
RT T1 <cTitle>2022 IEEE 5th International Conference on Electronics Technology (ICET)</cTitle>: T1 <Title>Ultra-Low On-Resistance TG-LDMOS With Three Separated Gates and High-k Dielectric Comparable to DG-LDMOS</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9825250&Exemplar=1&LAN=DE A1 Jia, Chen A1 Li, Xianglong A1 Sun, Yabin A1 Li, Xiaojin A1 Liu, Yun A1 Ding, Yanfang A1 Shi, Yanling YR 2022 SN 2768-6515 K1 Resistance K1 MOSFET K1 Conferences K1 Logic gates K1 Dielectrics K1 High-k dielectric materials K1 Triple gate lateral double-diffused MOSFET (TG-LDMOS) K1 double gate lateral double-diffused MOSFET (DG-LDMOS) K1 high-K (HK) K1 specific on-resistance (Ron,sp) K1 breakdown voltage (BV) SP 48 OP 51 LK http://dx.doi.org/https://doi.org/10.1109/ICET55676.2022.9825250 DO https://doi.org/10.1109/ICET55676.2022.9825250 SF ELIB - SuUB Bremen
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