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1 Ergebnisse
1
A 32Mb Embedded Flash Memory based on 28nm with the best Ce..:
, In:
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
,
Shin, Hyunjin
;
Won, Sangkyung
;
Kim, Dohui
... - p. 132-133 , 2022
Link:
https://doi.org/10.1109/VLSITechnologyandCir46769.2022..
RT T1 <cTitle>2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)</cTitle>: T1 <Title>A 32Mb Embedded Flash Memory based on 28nm with the best Cell Efficiency and Robust Design achievement featuring 13.48Mb/mm2 at 0.85V</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9830151&Exemplar=1&LAN=DE A1 Shin, Hyunjin A1 Won, Sangkyung A1 Kim, Dohui A1 Choi, Byunghun A1 Kim, Gyusung A1 Oh, Myeonghee A1 Choi, Jaeseung A1 Kye, Jongwook YR 2022 SN 2158-9682 K1 Temperature sensors K1 Charge pumps K1 Memory management K1 Very large scale integration K1 Sensors K1 Leakage currents K1 IP networks SP 132 OP 133 LK http://dx.doi.org/https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830151 DO https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830151 SF ELIB - SuUB Bremen
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