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1 Ergebnisse
1
8-Layer 3D Vertical Ru/AlOxNy/TiN RRAM with Mega-Ω Level LR..:
, In:
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
,
Qin, Shengjun
;
Tung, Maryann
;
Belliveau, Emma
... - p. 314-315 , 2022
Link:
https://doi.org/10.1109/VLSITechnologyandCir46769.2022..
RT T1 <cTitle>2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)</cTitle>: T1 <Title>8-Layer 3D Vertical Ru/AlOxNy/TiN RRAM with Mega-Ω Level LRS for Low Power and Ultrahigh-density Memory</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9830164&Exemplar=1&LAN=DE A1 Qin, Shengjun A1 Tung, Maryann A1 Belliveau, Emma A1 Liu, Shuhan A1 Kwon, Jimin A1 Chen, Wei-Chen A1 Jiang, Zizhen A1 Simon Wong, S. A1 Philip Won, H.-S. YR 2022 SN 2158-9682 K1 Resistance K1 Semiconductor device modeling K1 Solid modeling K1 Three-dimensional displays K1 Nonvolatile memory K1 Switches K1 Very large scale integration SP 314 OP 315 LK http://dx.doi.org/https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830164 DO https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830164 SF ELIB - SuUB Bremen
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