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1 Ergebnisse
1
Lg = 130 nm GAA MBCFETs with three-level stacked In0.53Ga0...:
, In:
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
,
Jo, H. -B.
;
Lee, I.-G.
;
Baek, J. -M.
... - p. 397-398 , 2022
Link:
https://doi.org/10.1109/VLSITechnologyandCir46769.2022..
RT T1 <cTitle>2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)</cTitle>: T1 <Title>Lg = 130 nm GAA MBCFETs with three-level stacked In0.53Ga0.47As nanosheets</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9830243&Exemplar=1&LAN=DE A1 Jo, H. -B. A1 Lee, I.-G. A1 Baek, J. -M. A1 Lee, S. T. A1 Choi, S. -M. A1 Kim, H.-J. A1 Jeong, H. -S. A1 Park, W.-S. A1 Yoo, J. -H. A1 Lee, H.-Y. A1 Yun, D. Y. A1 Son, SW. A1 Ko, D.-H. A1 Kim, T.-W. A1 Kwon, H. -M. A1 Kim, S.-K. A1 Kim, J. G. A1 Yun, J. A1 Kim, T. A1 Lee, J H. A1 Lee, J.-H. A1 Shin, C. -S. A1 Seo, K. -S. A1 Kim, D. -H. YR 2022 SN 2158-9682 K1 Wet etching K1 Gallium arsenide K1 Field effect transistors K1 Logic gates K1 Very large scale integration K1 Tin K1 Ions SP 397 OP 398 LK http://dx.doi.org/https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830243 DO https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830243 SF ELIB - SuUB Bremen
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