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1 Ergebnisse
1
Sub-10nm Ultra-thin ZnO Channel FET with Record-High 561 µA..:
, In:
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
,
Chand, Umesh
;
Sabry Aly, Mohamed M.
;
Lal, Manohar
... - p. 326-327 , 2022
Link:
https://doi.org/10.1109/VLSITechnologyandCir46769.2022..
RT T1 <cTitle>2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)</cTitle>: T1 <Title>Sub-10nm Ultra-thin ZnO Channel FET with Record-High 561 µA/µm ION at VDS 1V, High µ-84 cm2/V-s and1T-1RRAM Memory Cell Demonstration Memory Implications for Energy-Efficient Deep-Learning Computing</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9830250&Exemplar=1&LAN=DE A1 Chand, Umesh A1 Sabry Aly, Mohamed M. A1 Lal, Manohar A1 Chun-Kuei, Chen A1 Hooda, Sonu A1 Tsai, Shih-Hao A1 Fang, Zihang A1 Veluri, Hasita A1 Voon-Yew Thean, Aaron YR 2022 SN 2158-9682 K1 II-VI semiconductor materials K1 Field effect transistors K1 Memory management K1 Very large scale integration K1 Zinc oxide K1 Ions K1 Energy efficiency SP 326 OP 327 LK http://dx.doi.org/https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830250 DO https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830250 SF ELIB - SuUB Bremen
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