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1 Ergebnisse
1
Co-Optimization of SRAM Circuits with Sequential Access Pat..:
, In:
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
,
Morris, Daniel H
;
Liu, Huichu
;
Wu, Tony F
... - p. 216-217 , 2022
Link:
https://doi.org/10.1109/VLSITechnologyandCir46769.2022..
RT T1
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
: T1
Co-Optimization of SRAM Circuits with Sequential Access Patterns in a 7nm SoC Achieving 58% Memory Energy Reduction for AR Applications
UL https://suche.suub.uni-bremen.de/peid=ieee-9830251&Exemplar=1&LAN=DE A1 Morris, Daniel H A1 Liu, Huichu A1 Wu, Tony F A1 Sumbul, H Ekin A1 Ansari, Elnaz A1 Barachant, Alexandre A1 Reid, Jonathan A1 Beigne, Edith YR 2022 SN 2158-9682 K1 Conferences K1 Random access memory K1 Prototypes K1 Glass K1 Very large scale integration K1 Benchmark testing K1 Electromyography SP 216 OP 217 LK http://dx.doi.org/https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830251 DO https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830251 SF ELIB - SuUB Bremen
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