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A 0.6 ㎛ Small Pixel for High Resolution CMOS Image Sensor w..:

, In: 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),

Yun, Jungbin ; Lee, Seungjoon ; Cha, Seungwon... - p. 351-352 , 2022

Link: https://doi.org/10.1109/VLSITechnologyandCir46769.2022..

RT 
T1 <cTitle>2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)</cTitle>: T1 <Title>A 0.6 ㎛ Small Pixel for High Resolution CMOS Image Sensor with Full Well Capacity of 10,000e- by Dual Vertical Transfer Gate Technology</Title>

UL https://suche.suub.uni-bremen.de/peid=ieee-9830254&Exemplar=1&LAN=DE
				
A1 Yun, Jungbin
A1 Lee, Seungjoon
A1 Cha, Seungwon
A1 Kim, Jihun
A1 Lee, Jeongho
A1 Kim, Hanseok
A1 Lee, Eungkyu
A1 Kim, Seonok
A1 Hong, Seunghan
A1 Kim, Hyungchae
A1 Huh, Jinsuk
A1 Kim, Sungchul
A1 Kakehi, Kazunori
A1 Kim, Jae-Ho
A1 Koo, June-Mo
A1 Cho, Eunsang
A1 Jeong, Heegeun
A1 Park, Howoo
A1 Lee, Kyungho
A1 Ahn, JungChak
A1 Yim, JoonSeo
YR 2022
SN 2158-9682
K1 Image resolution
K1 Prototypes
K1 Voltage
K1 Logic gates
K1 Very large scale integration
K1 CMOS image sensors
K1 Timing
K1 CMOS image sensor
K1 dual vertical transfer gate
K1 small pixel
K1 triple conversion gain
K1 0.6um pixel
SP 351
OP 352
LK http://dx.doi.org/https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830254
DO https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830254
SF ELIB - SuUB Bremen

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