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Vertical Channel-All-Around (CAA) IGZO FET under 50 nm CD w..:

, In: 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),

Huang, Kailiang ; Duan, Xinlv ; Feng, Junxiao... - p. 296-297 , 2022

Link: https://doi.org/10.1109/VLSITechnologyandCir46769.2022..

RT 
T1 <cTitle>2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)</cTitle>: T1 <Title>Vertical Channel-All-Around (CAA) IGZO FET under 50 nm CD with High Read Current of 32.8 μA/μm (Vth + 1 V), Well-performed Thermal Stability up to 120 ℃ for Low Latency, High-density 2T0C 3D DRAM Application</Title>

UL https://suche.suub.uni-bremen.de/peid=ieee-9830271&Exemplar=1&LAN=DE
				
A1 Huang, Kailiang
A1 Duan, Xinlv
A1 Feng, Junxiao
A1 Sun, Ying
A1 Lu, Congyan
A1 Chen, Chuanke
A1 Jiao, Guangfan
A1 Lin, Xinpeng
A1 Shao, Jinhai
A1 Yin, Shihui
A1 Sheng, Jiazhen
A1 Wang, Zhaogui
A1 Zhang, Wenqiang
A1 Chuai, Xichen
A1 Niu, Jiebin
A1 Wang, Wenwu
A1 Wu, Ying
A1 Jing, Weiliang
A1 Wang, Zhengbo
A1 Xu, Jeffrey
A1 Yang, Guanhua
A1 Geng, Di
A1 Li, Ling
A1 Liu, Ming
YR 2022
SN 2158-9682
K1 Three-dimensional displays
K1 Temperature
K1 Field effect transistors
K1 Random access memory
K1 Very large scale integration
K1 Ions
K1 Circuit stability
K1 Channel-all-around
K1 IGZO
K1 3D DRAM
SP 296
OP 297
LK http://dx.doi.org/https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830271
DO https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830271
SF ELIB - SuUB Bremen

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