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1 Ergebnisse
1
A 22nm 32Mb Embedded STT-MRAM Macro Achieving 5.9ns Random ..:
, In:
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
,
Shimoi, Takahiro
;
Matsubara, Ken
;
Saito, Tomoya
... - p. 134-135 , 2022
Link:
https://doi.org/10.1109/VLSITechnologyandCir46769.2022..
RT T1 <cTitle>2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)</cTitle>: T1 <Title>A 22nm 32Mb Embedded STT-MRAM Macro Achieving 5.9ns Random Read Access and 5.8MB/s Write Throughput at up to Tj of 150 °C</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9830273&Exemplar=1&LAN=DE A1 Shimoi, Takahiro A1 Matsubara, Ken A1 Saito, Tomoya A1 Ogawa, Tomoya A1 Taito, Yasuhiko A1 Kaneda, Yoshinobu A1 Izuna, Masayuki A1 Takeda, Koichi A1 Mitani, Hidenori A1 Ito, Takashi A1 Kono, Takashi YR 2022 SN 2158-9682 K1 Energy consumption K1 Microcontrollers K1 Voltage K1 Very large scale integration K1 Throughput SP 134 OP 135 LK http://dx.doi.org/https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830273 DO https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830273 SF ELIB - SuUB Bremen
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