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1 Ergebnisse
1
Highly Reliable 40nm Embedded Dual-Interface-Switching RRAM..:
, In:
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
,
Zhao, L.
;
Chen, Z.
;
Manea, D.
... - p. 316-317 , 2022
Link:
https://doi.org/10.1109/VLSITechnologyandCir46769.2022..
RT T1 <cTitle>2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)</cTitle>: T1 <Title>Highly Reliable 40nm Embedded Dual-Interface-Switching RRAM Technology for Display Driver IC Applications</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9830289&Exemplar=1&LAN=DE A1 Zhao, L. A1 Chen, Z. A1 Manea, D. A1 Li, S. A1 Li, J. A1 Zhu, Y. A1 Sui, Z. A1 Lu, Z. YR 2022 SN 2158-9682 K1 Limiting K1 Pandemics K1 Random access memory K1 Production K1 High-voltage techniques K1 Very large scale integration K1 Inspection SP 316 OP 317 LK http://dx.doi.org/https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830289 DO https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830289 SF ELIB - SuUB Bremen
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