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1 Ergebnisse
1
Endurance > 1011 Cycling of 3D GAA Nanosheet Ferroelectric ..:
, In:
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
,
Liao, C.-Y.
;
Hsiang, K.-Y.
;
Lou, Z. -F.
... - p. 1-2 , 2022
Link:
https://doi.org/10.1109/VLSITechnologyandCir46769.2022..
RT T1 <cTitle>2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)</cTitle>: T1 <Title>Endurance > 1011 Cycling of 3D GAA Nanosheet Ferroelectric FET with Stacked HfZrO2 to Homogenize Corner Field Toward Mitigate Dead Zone for High-Density eNVM</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9830345&Exemplar=1&LAN=DE A1 Liao, C.-Y. A1 Hsiang, K.-Y. A1 Lou, Z. -F. A1 Tseng, H.-C. A1 Lin, C.-Y. A1 Li, Z.-X. A1 Hsieh, F.-C. A1 Wang, C.-C. A1 Chang, F.-S. A1 Ray, W.-C. A1 Tseng, Y.-Y. A1 Chang, S. T. A1 Chen, T.-C. A1 Lee, M. H. YR 2022 SN 2158-9682 K1 Three-dimensional displays K1 Voltage fluctuations K1 Gallium arsenide K1 Switches K1 Tin K1 Very large scale integration K1 Logic gates SP 1 OP 2 LK http://dx.doi.org/https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830345 DO https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830345 SF ELIB - SuUB Bremen
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