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1 Ergebnisse
1
Demonstration of High Endurance Capability on Mega-Bit RRAM..:
, In:
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
,
Yang, Chang-Feng
;
Wu, Chun-Yu
;
Shih, Meng-Chun
... - p. 318-319 , 2022
Link:
https://doi.org/10.1109/VLSITechnologyandCir46769.2022..
RT T1 <cTitle>2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)</cTitle>: T1 <Title>Demonstration of High Endurance Capability on Mega-Bit RRAM Macro and Model of ppm Level Failures</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9830374&Exemplar=1&LAN=DE A1 Yang, Chang-Feng A1 Wu, Chun-Yu A1 Shih, Meng-Chun A1 Yang, Ming-Ta A1 Yang, Ming-Han A1 Wu, Yu-Tien A1 Chien, Ta-Chun A1 Lai, Chih-Wei A1 Tsai, Shih-Chi A1 Chu, Wen-Ting A1 Hung, Arthur YR 2022 SN 2158-9682 K1 Resistance K1 Monte Carlo methods K1 Fitting K1 Very large scale integration K1 Tunneling K1 Programming K1 Error correction codes K1 endurance K1 RRAM K1 random telegraph noise SP 318 OP 319 LK http://dx.doi.org/https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830374 DO https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830374 SF ELIB - SuUB Bremen
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