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1 Ergebnisse
1
Scaling Dual-Gate Ultra-thin a-IGZO FET to 30 nm Channel Le..:
, In:
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
,
Chen, Kaifei
;
Niu, Jiebin
;
Yang, Guanhua
... - p. 298-299 , 2022
Link:
https://doi.org/10.1109/VLSITechnologyandCir46769.2022..
RT T1 <cTitle>2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)</cTitle>: T1 <Title>Scaling Dual-Gate Ultra-thin a-IGZO FET to 30 nm Channel Length with Record-high Gm,max of 559 µS/µm at VDS=1 V, Record-low DIBL of 10 mV/V and Nearly Ideal SS of 63 mV/dec</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9830389&Exemplar=1&LAN=DE A1 Chen, Kaifei A1 Niu, Jiebin A1 Yang, Guanhua A1 Liu, Menggan A1 Lu, Wendong A1 Liao, Fuxi A1 Huang, Kailiang A1 Duan, XinLv A1 Lu, Congyan A1 Wang, Jiawei A1 Wang, Lingfei A1 Li, Mengmeng A1 Geng, Di A1 Zhao, Chao A1 Wang, Guilei A1 Lu, Nianduan A1 Li, Ling A1 Liu, Ming YR 2022 SN 2158-9682 K1 Field effect transistors K1 Modulation K1 Very large scale integration K1 Logic gates K1 Benchmark testing K1 Ions K1 Insulators SP 298 OP 299 LK http://dx.doi.org/https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830389 DO https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830389 SF ELIB - SuUB Bremen
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