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A 16 GB 1024 GB/s HBM3 DRAM with On-Die Error Control Schem..:

, In: 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),

Ryu, Yesin ; Kwon, Young-Cheon ; Lee, Jae Hoon... - p. 130-131 , 2022

Link: https://doi.org/10.1109/VLSITechnologyandCir46769.2022..

RT 
T1 <cTitle>2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)</cTitle>: T1 <Title>A 16 GB 1024 GB/s HBM3 DRAM with On-Die Error Control Scheme for Enhanced RAS Features</Title>

UL https://suche.suub.uni-bremen.de/peid=ieee-9830391&Exemplar=1&LAN=DE
				
A1 Ryu, Yesin
A1 Kwon, Young-Cheon
A1 Lee, Jae Hoon
A1 Ahn, Sung-Gi
A1 Park, Jaewon
A1 Lee, Kijun
A1 Choi, Yu Ho
A1 Cho, Han-Won
A1 Kim, Jae San
A1 Lee, Jungyu
A1 Lee, Haesuk
A1 Song, Seung Ho
A1 Min Ryu, Je
A1 Yun, Yeong Ho
A1 Shin, Useung
A1 Cho, Dajung
A1 Park, Jeong Hoan
A1 Jeong, Jae-Seung
A1 Lee, Sukhan
A1 Lim, Kyoung-Hwan
A1 Kim, Tae-Sung
A1 Kim, Kyungmin
A1 Cha, Yu Jin
A1 Joo Lee, Ik
A1 Byun, Tae Kyu
A1 Sik Yoo, Han
A1 Song, Yeong Geol
A1 Lee, Myung-Kyu
A1 Cho, Sunghye
A1 Kim, Sung-Rae
A1 Choi, Ji-Min
A1 Kim, Hyoung Min
A1 Young Kim, Soo
A1 Youn, Jaeyoun
A1 Kim, Myeong-O
A1 Sohn, Kyomin
A1 Hwang, SangJoon
A1 Lee, JooYoung
YR 2022
SN 2158-9682
K1 Random access memory
K1 Bandwidth
K1 Very large scale integration
K1 Built-in self-test
K1 Error correction codes
K1 Error correction
K1 Circuit faults
K1 DRAM
K1 HBM3
K1 RAS
K1 ECC
K1 MBIST
K1 ECS
SP 130
OP 131
LK http://dx.doi.org/https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830391
DO https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830391
SF ELIB - SuUB Bremen

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