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Ultra-low Leakage IGZO-TFTs with Raised Source/Drain for Vt..:

, In: 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),

Subhechha, S. ; Rassoul, N. ; Belmonte, A.... - p. 292-293 , 2022

Link: https://doi.org/10.1109/VLSITechnologyandCir46769.2022..

RT 
T1 <cTitle>2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)</cTitle>: T1 <Title>Ultra-low Leakage IGZO-TFTs with Raised Source/Drain for Vt > 0 V and Ion > 30 µA/µm</Title>

UL https://suche.suub.uni-bremen.de/peid=ieee-9830448&Exemplar=1&LAN=DE
				
A1 Subhechha, S.
A1 Rassoul, N.
A1 Belmonte, A.
A1 Hody, H.
A1 Dekkers, H.
A1 van Setten, M. J.
A1 Chasin, A.
A1 Sharifi, S.H.
A1 Sutar, S.
A1 Magnarin, L.
A1 Celano, U.
A1 Puliyalil, H.
A1 Kundu, S.
A1 Pak, M.
A1 Teugels, L.
A1 Tsvetanova, D.
A1 Bazzazian, N.
A1 Vandersmissen, K.
A1 Biasotto, C.
A1 Batuk, D.
A1 Geypen, J.
A1 Heijlen, J.
A1 Delhougne, R.
A1 Kar, G. S.
YR 2022
SN 2158-9682
K1 Performance evaluation
K1 Atomic measurements
K1 Annealing
K1 Logic gates
K1 Very large scale integration
K1 Benchmark testing
K1 Ions
SP 292
OP 293
LK http://dx.doi.org/https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830448
DO https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830448
SF ELIB - SuUB Bremen

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