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1 Ergebnisse
1
NVDimm-FE: A High-density 3D Architecture of 3-bit/c 2TnCFE..:
, In:
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
,
Hsieh, E. R.
;
Chang, J. K.
;
Tang, T. Y.
... - p. 359-360 , 2022
Link:
https://doi.org/10.1109/VLSITechnologyandCir46769.2022..
RT T1 <cTitle>2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)</cTitle>: T1 <Title>NVDimm-FE: A High-density 3D Architecture of 3-bit/c 2TnCFE to Break Great Memory Wall with 10 ns of PGM-pulse, 1010 Cycles of Endurance, and Decade Lifetime at 103 °C</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9830515&Exemplar=1&LAN=DE A1 Hsieh, E. R. A1 Chang, J. K. A1 Tang, T. Y. A1 Li, Y. J. A1 Liang, C. W. A1 Lin, M. Y. A1 Huang, S. Y. A1 Su, C. J. A1 Guo, J. C. A1 Chung, S. S. YR 2022 SN 2158-9682 K1 Three-dimensional displays K1 High performance computing K1 Memory management K1 Random access memory K1 Very large scale integration K1 Three-dimensional integrated circuits SP 359 OP 360 LK http://dx.doi.org/https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830515 DO https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830515 SF ELIB - SuUB Bremen
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