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1
Understanding RowHammer Under Reduced Wordline Voltage: An ..:
, In:
2022 52nd Annual IEEE/IFIP International Conference on Dependable Systems and Networks (DSN)
,
Yaglikci, A. Giray
;
Luo, Haocong
;
De Oliviera, Geraldo F.
... - p. 475-487 , 2022
Link:
https://doi.org/10.1109/DSN53405.2022.00054
RT T1 <cTitle>2022 52nd Annual IEEE/IFIP International Conference on Dependable Systems and Networks (DSN)</cTitle>: T1 <Title>Understanding RowHammer Under Reduced Wordline Voltage: An Experimental Study Using Real DRAM Devices</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9833679&Exemplar=1&LAN=DE A1 Yaglikci, A. Giray A1 Luo, Haocong A1 De Oliviera, Geraldo F. A1 Olgun, Ataberk A1 Patel, Minesh A1 Park, Jisung A1 Hassan, Hasan A1 Kim, Jeremie S. A1 Orosa, Lois A1 Mutlu, Onur YR 2022 SN 2158-3927 K1 Bit error rate K1 Voltage K1 High-voltage techniques K1 DRAM chips K1 SPICE K1 Data models K1 Timing SP 475 OP 487 LK http://dx.doi.org/https://doi.org/10.1109/DSN53405.2022.00054 DO https://doi.org/10.1109/DSN53405.2022.00054 SF ELIB - SuUB Bremen
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