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Design Optimization of a New Nanostructured P-GaN Gate for ..:
, In:
2022 29th International Conference on Mixed Design of Integrated Circuits and System (MIXDES)
,
Rouly, Daniel
;
Tasselli, Josiane
;
Austin, Patrick
... - p. 105-109 , 2022
Link:
https://doi.org/10.23919/MIXDES55591.2022.9838389
RT T1 <cTitle>2022 29th International Conference on Mixed Design of Integrated Circuits and System (MIXDES)</cTitle>: T1 <Title>Design Optimization of a New Nanostructured P-GaN Gate for Normally-off GaN HEMTs</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9838389&Exemplar=1&LAN=DE A1 Rouly, Daniel A1 Tasselli, Josiane A1 Austin, Patrick A1 Haloui, Chaymaa A1 Isoird, Karine A1 Morancho, Frederic YR 2022 K1 Three-dimensional displays K1 HEMTs K1 Logic gates K1 Threshold voltage K1 Wide band gap semiconductors K1 Semiconductor process modeling K1 Behavioral sciences K1 HEMT K1 P-GaN gate K1 normally-off K1 TCAD simulations SP 105 OP 109 LK http://dx.doi.org/https://doi.org/10.23919/MIXDES55591.2022.9838389 DO https://doi.org/10.23919/MIXDES55591.2022.9838389 SF ELIB - SuUB Bremen
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