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1 Ergebnisse
1
Loss Model for SiC MOSFET based Power Modules using Synchro..:
, In:
2022 International Symposium on Power Electronics, Electrical Drives, Automation and Motion (SPEEDAM)
,
Velic, Timijan
;
Barkow, Maximilian
;
Parspour, Nejila
- p. 503-510 , 2022
Link:
https://doi.org/10.1109/SPEEDAM53979.2022.9842103
RT T1 <cTitle>2022 International Symposium on Power Electronics, Electrical Drives, Automation and Motion (SPEEDAM)</cTitle>: T1 <Title>Loss Model for SiC MOSFET based Power Modules using Synchronous Rectification</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9842103&Exemplar=1&LAN=DE A1 Velic, Timijan A1 Barkow, Maximilian A1 Parspour, Nejila YR 2022 K1 Semiconductor device modeling K1 MOSFET K1 Power measurement K1 Silicon carbide K1 Current measurement K1 Multichip modules K1 Loss measurement K1 Power converters K1 power modules K1 loss model K1 silicon-carbide (SiC) SP 503 OP 510 LK http://dx.doi.org/https://doi.org/10.1109/SPEEDAM53979.2022.9842103 DO https://doi.org/10.1109/SPEEDAM53979.2022.9842103 SF ELIB - SuUB Bremen
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