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1
Investigating Defect-Assisted Emission in BaSi2 by Power De..:
, In:
2022 IEEE International Conference on Semiconductor Electronics (ICSE)
,
Mohmad, Abdul Rahman
;
Xu, Zhihao
;
Yamashita, Yudai
. - p. 133-135 , 2022
Link:
https://doi.org/10.1109/ICSE56004.2022.9863086
RT T1 <cTitle>2022 IEEE International Conference on Semiconductor Electronics (ICSE)</cTitle>: T1 <Title>Investigating Defect-Assisted Emission in BaSi2 by Power Dependent Photoluminescence</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9863086&Exemplar=1&LAN=DE A1 Mohmad, Abdul Rahman A1 Xu, Zhihao A1 Yamashita, Yudai A1 Suemasu, Takashi YR 2022 K1 Temperature measurement K1 Temperature dependence K1 Semiconductor device measurement K1 Barium K1 Power measurement K1 Photonic band gap K1 Photoluminescence K1 photoluminescence K1 barium disilicide K1 point defects K1 solar cells SP 133 OP 135 LK http://dx.doi.org/https://doi.org/10.1109/ICSE56004.2022.9863086 DO https://doi.org/10.1109/ICSE56004.2022.9863086 SF ELIB - SuUB Bremen
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