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1 Ergebnisse
1
A 97–107 GHz Triple-Stacked-FET Power Amplifier with 23.7dB..:
, In:
2022 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)
,
Kim, Kyunghwan
;
Lee, Kangseop
;
Choi, Seung-Uk
... - p. 183-186 , 2022
Link:
https://doi.org/10.1109/RFIC54546.2022.9863175
RT T1 <cTitle>2022 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)</cTitle>: T1 <Title>A 97–107 GHz Triple-Stacked-FET Power Amplifier with 23.7dB Peak Gain, 15.1dBm PSAT, and 18.6% PAEMAX in 28-nm FD-SOI CMOS</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9863175&Exemplar=1&LAN=DE A1 Kim, Kyunghwan A1 Lee, Kangseop A1 Choi, Seung-Uk A1 Kim, Jiseul A1 Choi, Chan-Gyu A1 Song, Ho-Jin YR 2022 SN 2375-0995 K1 Resistance K1 Q-factor K1 Shunts (electrical) K1 Power system measurements K1 Stacking K1 Layout K1 Power amplifiers K1 millimeter wave K1 power amplifiers K1 stacked-FET K1 stacking K1 F-band K1 FD-SOI K1 CMOS K1 high efficiency SP 183 OP 186 LK http://dx.doi.org/https://doi.org/10.1109/RFIC54546.2022.9863175 DO https://doi.org/10.1109/RFIC54546.2022.9863175 SF ELIB - SuUB Bremen
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