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1 Ergebnisse
1
Comprehensive Analysis of Gate Oxide Short in Junctionless ..:
, In:
2022 IEEE International Conference on Semiconductor Electronics (ICSE)
,
Rahman, Md Wahidur
;
Alias, N. Ezaila
;
Hamzah, Afiq
.. - p. 73-76 , 2022
Link:
https://doi.org/10.1109/ICSE56004.2022.9863184
RT T1 <cTitle>2022 IEEE International Conference on Semiconductor Electronics (ICSE)</cTitle>: T1 <Title>Comprehensive Analysis of Gate Oxide Short in Junctionless Fin Field Effect Transistor</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9863184&Exemplar=1&LAN=DE A1 Rahman, Md Wahidur A1 Alias, N. Ezaila A1 Hamzah, Afiq A1 Peng Tan, M. L. A1 Kamisian, Izam YR 2022 K1 Semiconductor device modeling K1 Analytical models K1 Logic gates K1 Electric variables K1 FinFETs K1 Inverters K1 Delays K1 FinFET K1 junctionless K1 Gate oxide short K1 defect K1 pinhole K1 leakage SP 73 OP 76 LK http://dx.doi.org/https://doi.org/10.1109/ICSE56004.2022.9863184 DO https://doi.org/10.1109/ICSE56004.2022.9863184 SF ELIB - SuUB Bremen
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