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1 Ergebnisse
1
ScAlN-GaN Transistor Technology for Millimeter-wave Ultra-h..:
, In:
2022 IEEE/MTT-S International Microwave Symposium - IMS 2022
,
Chumbes, Eduardo M.
;
Logan, John
;
Schultz, Brian
... - p. 295-297 , 2022
Link:
https://doi.org/10.1109/IMS37962.2022.9865268
RT T1 <cTitle>2022 IEEE/MTT-S International Microwave Symposium - IMS 2022</cTitle>: T1 <Title>ScAlN-GaN Transistor Technology for Millimeter-wave Ultra-high Power and Efficient MMICs</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9865268&Exemplar=1&LAN=DE A1 Chumbes, Eduardo M. A1 Logan, John A1 Schultz, Brian A1 DeJarld, Matt A1 Tahhan, Maher A1 Kolias, Nick A1 Hardy, Matt A1 Ancona, Mario A1 Meyer, David YR 2022 SN 2576-7216 K1 Radio frequency K1 Millimeter wave transistors K1 Millimeter wave technology K1 Millimeter wave measurements K1 Power amplifiers K1 HEMTs K1 Transistors K1 Scandium K1 Scandium Aluminum Nitride K1 Transition Metal Nitride K1 Gallium Nitride K1 Ka-band K1 W-band K1 millimeter-wave K1 field effect transistors K1 high electron mobility transistors K1 heterostructure field effect transistors SP 295 OP 297 LK http://dx.doi.org/https://doi.org/10.1109/IMS37962.2022.9865268 DO https://doi.org/10.1109/IMS37962.2022.9865268 SF ELIB - SuUB Bremen
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