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On the Influence of Transistor Dimensions on the Dispersive..:
, In:
2022 IEEE/MTT-S International Microwave Symposium - IMS 2022
,
Krause, Sascha
;
Zervos, Christos
;
Beleniotis, Petros
... - p. 914-917 , 2022
Link:
https://doi.org/10.1109/IMS37962.2022.9865474
RT T1 <cTitle>2022 IEEE/MTT-S International Microwave Symposium - IMS 2022</cTitle>: T1 <Title>On the Influence of Transistor Dimensions on the Dispersive Behavior in AlGaN/GaN HEMT-Based PAs and Robust LNAs</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9865474&Exemplar=1&LAN=DE A1 Krause, Sascha A1 Zervos, Christos A1 Beleniotis, Petros A1 Ritter, Dan A1 Rudolph, Matthias A1 Heinrich, Wolfgang YR 2022 SN 2576-7216 K1 Radio frequency K1 Performance evaluation K1 Resistance K1 Logic gates K1 Threshold voltage K1 Wide band gap semiconductors K1 Transistors K1 AlGaN/GaN HEMT K1 trapping K1 power amplifiers K1 low noise amplifiers K1 device scaling SP 914 OP 917 LK http://dx.doi.org/https://doi.org/10.1109/IMS37962.2022.9865474 DO https://doi.org/10.1109/IMS37962.2022.9865474 SF ELIB - SuUB Bremen
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