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1 Ergebnisse
1
Optimal device selection tool for discrete SiC MOSFETs cons..:
, In:
11th International Conference on Power Electronics, Machines and Drives (PEMD 2022)
,
Calder, H.
;
Shahbazi, M.
;
Horsfall, A.
- p. None , 2022
Link:
https://doi.org/10.1049/icp.2022.1150
RT T1 <cTitle>11th International Conference on Power Electronics, Machines and Drives (PEMD 2022)</cTitle>: T1 <Title>Optimal device selection tool for discrete SiC MOSFETs considering switching loss challenges of paralleled devices</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9868459&Exemplar=1&LAN=DE A1 Calder, H. A1 Shahbazi, M. A1 Horsfall, A. YR 2022 K1 power MOSFET K1 semiconductor device models K1 silicon compounds K1 wide band gap semiconductors K1 device selection K1 SiC discrete MOSFET behaviour K1 experimental verification K1 dynamic behaviour K1 key device parameters K1 power losses K1 SiC MOSFET input K1 entire device family K1 baseline MOSFETs K1 optimal device selection tool K1 discrete SiC MOSFETs K1 paralleled devices K1 voltage 1.2 kV K1 SiC SP None LK http://dx.doi.org/https://doi.org/10.1049/icp.2022.1150 DO https://doi.org/10.1049/icp.2022.1150 SF ELIB - SuUB Bremen
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