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A Comparison of the Short Circuit Performance of 650 V SiC ..:

, In: 11th International Conference on Power Electronics, Machines and Drives (PEMD 2022),

Alatise, O. ; Erfan, B. ; Wu, R.... - p. None , 2022

Link: https://doi.org/10.1049/icp.2022.1071

RT 
T1 <cTitle>11th International Conference on Power Electronics, Machines and Drives (PEMD 2022)</cTitle>: T1 <Title>A Comparison of the Short Circuit Performance of 650 V SiC Planar MOSFETs, Trench MOSFETs and Cascode JFETs</Title>

UL https://suche.suub.uni-bremen.de/peid=ieee-9868553&Exemplar=1&LAN=DE
				
A1 Alatise, O.
A1 Erfan, B.
A1 Wu, R.
A1 Agbo, N.
A1 Mendy, S.
A1 Jahdi, S.
A1 Ortiz Gonzalez, J.
A1 Mawby, P.
YR 2022
K1 junction gate field effect transistors
K1 power MOSFET
K1 semiconductor device breakdown
K1 semiconductor device reliability
K1 short-circuit currents
K1 silicon compounds
K1 wide band gap semiconductors
K1 short circuit capability
K1 SCWT
K1 short circuit performance
K1 device ruggedness
K1 short circuit conditions
K1 planar MOSFET
K1 trench MOSFET
K1 cascode JFET
K1 electrothermal stress
K1 junction temperature rise
K1 short circuit withstand time
K1 temperature dependency
K1 temperature 25.0 degC
K1 temperature 75.0 degC
K1 temperature 150.0 degC
K1 voltage 650.0 V
K1 SiC
SP None
LK http://dx.doi.org/https://doi.org/10.1049/icp.2022.1071
DO https://doi.org/10.1049/icp.2022.1071
SF ELIB - SuUB Bremen

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