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A Comparison of the Short Circuit Performance of 650 V SiC ..:
, In:
11th International Conference on Power Electronics, Machines and Drives (PEMD 2022)
,
Alatise, O.
;
Erfan, B.
;
Wu, R.
... - p. None , 2022
Link:
https://doi.org/10.1049/icp.2022.1071
RT T1
11th International Conference on Power Electronics, Machines and Drives (PEMD 2022)
: T1
A Comparison of the Short Circuit Performance of 650 V SiC Planar MOSFETs, Trench MOSFETs and Cascode JFETs
UL https://suche.suub.uni-bremen.de/peid=ieee-9868553&Exemplar=1&LAN=DE A1 Alatise, O. A1 Erfan, B. A1 Wu, R. A1 Agbo, N. A1 Mendy, S. A1 Jahdi, S. A1 Ortiz Gonzalez, J. A1 Mawby, P. YR 2022 K1 junction gate field effect transistors K1 power MOSFET K1 semiconductor device breakdown K1 semiconductor device reliability K1 short-circuit currents K1 silicon compounds K1 wide band gap semiconductors K1 short circuit capability K1 SCWT K1 short circuit performance K1 device ruggedness K1 short circuit conditions K1 planar MOSFET K1 trench MOSFET K1 cascode JFET K1 electrothermal stress K1 junction temperature rise K1 short circuit withstand time K1 temperature dependency K1 temperature 25.0 degC K1 temperature 75.0 degC K1 temperature 150.0 degC K1 voltage 650.0 V K1 SiC SP None LK http://dx.doi.org/https://doi.org/10.1049/icp.2022.1071 DO https://doi.org/10.1049/icp.2022.1071 SF ELIB - SuUB Bremen
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