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1 Ergebnisse
1
Preparation of high-quality Y:Hf0.5Zr0.5O2 ferroelectric ga..:
, In:
2022 23rd International Conference on Electronic Packaging Technology (ICEPT)
,
Cai, Yali
;
Yu, Liang
;
Yue, Wenfeng
... - p. 1-4 , 2022
Link:
https://doi.org/10.1109/ICEPT56209.2022.9873219
RT T1
2022 23rd International Conference on Electronic Packaging Technology (ICEPT)
: T1
Preparation of high-quality Y:Hf0.5Zr0.5O2 ferroelectric gate dielectric film by chemical solution deposition
UL https://suche.suub.uni-bremen.de/peid=ieee-9873219&Exemplar=1&LAN=DE A1 Cai, Yali A1 Yu, Liang A1 Yue, Wenfeng A1 Liu, Lixia A1 Zhang, Chong A1 Guo, Quansheng A1 Jia, Tingting A1 Yu, Shuhui A1 Sun, Rong YR 2022 K1 Annealing K1 Crystals K1 Doping K1 Logic gates K1 Silicon K1 Dielectrics K1 Hafnium compounds K1 Hf0.5Zr0.5O2 K1 spin-coating process K1 annealing process K1 chemical solution deposition K1 ferroelectric gate dielectrics SP 1 OP 4 LK http://dx.doi.org/https://doi.org/10.1109/ICEPT56209.2022.9873219 DO https://doi.org/10.1109/ICEPT56209.2022.9873219 SF ELIB - SuUB Bremen
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