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1 Ergebnisse
1
Study on Single-Event Gate Rapture of Si VDMOSFET: failure ..:
, In:
2022 23rd International Conference on Electronic Packaging Technology (ICEPT)
,
Lang, Lei
;
Luo, Houcai
;
Chen, Xianping
.. - p. 1-4 , 2022
Link:
https://doi.org/10.1109/ICEPT56209.2022.9873265
RT T1
2022 23rd International Conference on Electronic Packaging Technology (ICEPT)
: T1
Study on Single-Event Gate Rapture of Si VDMOSFET: failure mechanism and influence factors
UL https://suche.suub.uni-bremen.de/peid=ieee-9873265&Exemplar=1&LAN=DE A1 Lang, Lei A1 Luo, Houcai A1 Chen, Xianping A1 Li, Jincheng A1 Jiang, Peixuan YR 2022 K1 Energy exchange K1 Failure analysis K1 Voltage K1 Logic gates K1 Numerical simulation K1 Silicon K1 High-k dielectric materials K1 2D numerical simulation K1 Single-Event Gate Rapture K1 Si VDMOSFET SP 1 OP 4 LK http://dx.doi.org/https://doi.org/10.1109/ICEPT56209.2022.9873265 DO https://doi.org/10.1109/ICEPT56209.2022.9873265 SF ELIB - SuUB Bremen
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