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Characterization of TiO2 deposited by ALD for SiC MOS capac..:
, In:
2022 36th Symposium on Microelectronics Technology (SBMICRO)
,
Cesar, R. R.
;
Beraldo, R. M.
;
Joanni, E.
... - p. 1-4 , 2022
Link:
https://doi.org/10.1109/SBMICRO55822.2022.9881040
RT T1
2022 36th Symposium on Microelectronics Technology (SBMICRO)
: T1
Characterization of TiO2 deposited by ALD for SiC MOS capacitor application
UL https://suche.suub.uni-bremen.de/peid=ieee-9881040&Exemplar=1&LAN=DE A1 Cesar, R. R. A1 Beraldo, R. M. A1 Joanni, E. A1 Mederos, M. A1 Teixeira, R. C. A1 Diniz, J. A. YR 2022 K1 Silicon carbide K1 Films K1 Capacitors K1 MOS capacitors K1 Refractive index K1 Silicon K1 Leakage currents K1 TiO2 K1 silicon substrate K1 silicon carbide substrate K1 MOS capacitor K1 CxV curve SP 1 OP 4 LK http://dx.doi.org/https://doi.org/10.1109/SBMICRO55822.2022.9881040 DO https://doi.org/10.1109/SBMICRO55822.2022.9881040 SF ELIB - SuUB Bremen
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