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Modeling Quantum Confinement in Multi-Gate Transistors with..:
, In:
2022 36th Symposium on Microelectronics Technology (SBMICRO)
,
Soares, Caroline S.
;
Baikadi, Pranay K. R.
;
Rossetto, Alan C. J.
... - p. 1-4 , 2022
Link:
https://doi.org/10.1109/SBMICRO55822.2022.9881047
RT T1
2022 36th Symposium on Microelectronics Technology (SBMICRO)
: T1
Modeling Quantum Confinement in Multi-Gate Transistors with Effective Potential
UL https://suche.suub.uni-bremen.de/peid=ieee-9881047&Exemplar=1&LAN=DE A1 Soares, Caroline S. A1 Baikadi, Pranay K. R. A1 Rossetto, Alan C. J. A1 Pavanello, Marcelo A. A1 Vasileska, Dragica A1 Wirth, Gilson I. YR 2022 K1 Electric potential K1 Solid modeling K1 Monte Carlo methods K1 Smoothing methods K1 Potential well K1 FinFETs K1 Silicon K1 quantum confinement K1 FinFET K1 nanowire transistors K1 effective potential SP 1 OP 4 LK http://dx.doi.org/https://doi.org/10.1109/SBMICRO55822.2022.9881047 DO https://doi.org/10.1109/SBMICRO55822.2022.9881047 SF ELIB - SuUB Bremen
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