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1 Ergebnisse
1
MP18–26 Ru Direct-Etch Integration Development with Leakage..:
, In:
2022 IEEE International Interconnect Technology Conference (IITC)
,
Pokhrel, Ankit
;
Marti, Giulio
;
O'Toole, Martin
... - p. 61-63 , 2022
Link:
https://doi.org/10.1109/IITC52079.2022.9881278
RT T1 <cTitle>2022 IEEE International Interconnect Technology Conference (IITC)</cTitle>: T1 <Title>MP18–26 Ru Direct-Etch Integration Development with Leakage Improvement and Increased Aspect Ratio</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9881278&Exemplar=1&LAN=DE A1 Pokhrel, Ankit A1 Marti, Giulio A1 O'Toole, Martin A1 Murdoch, Gayle A1 Gupta, Anshul A1 Decoster, Stefan A1 Kundu, Souvik A1 Camerotto, Elisabeth A1 Le, Quoc Toan A1 Thiam, Arame A1 Lesniewska, Alicja A1 Park, Seongho A1 Tokei, Zsolt YR 2022 SN 2380-6338 K1 Resistance K1 Fabrication K1 Ruthenium K1 Films K1 Current measurement K1 Metals K1 Leakage currents K1 Semi-damascene K1 Interconnect K1 Subtractive etch K1 BEOL K1 Sub-5nm K1 Line resistance K1 Leakage Current SP 61 OP 63 LK http://dx.doi.org/https://doi.org/10.1109/IITC52079.2022.9881278 DO https://doi.org/10.1109/IITC52079.2022.9881278 SF ELIB - SuUB Bremen
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