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Performance evaluation of SRAM cell using FinFET:
, In:
2022 3rd International Conference on Electronics and Sustainable Communication Systems (ICESC)
,
P, Dinesha.
;
Subba Reddy, K.
;
Sai Vishal Reddy, M.
.. - p. 253-257 , 2022
Link:
https://doi.org/10.1109/ICESC54411.2022.9885372
RT T1 <cTitle>2022 3rd International Conference on Electronics and Sustainable Communication Systems (ICESC)</cTitle>: T1 <Title>Performance evaluation of SRAM cell using FinFET</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9885372&Exemplar=1&LAN=DE A1 P, Dinesha. A1 Subba Reddy, K. A1 Sai Vishal Reddy, M. A1 Sri Harsha Phani, S. A1 Chaitanya, M. YR 2022 K1 Semiconductor device modeling K1 Performance evaluation K1 Predictive models K1 SRAM cells K1 FinFETs K1 CMOS technology K1 Stability analysis K1 FinFET K1 CMOS K1 Static Random Access Memory (SRAM) K1 Predictive Technology Models (PTM) K1 Static noise margin (SNM) SP 253 OP 257 LK http://dx.doi.org/https://doi.org/10.1109/ICESC54411.2022.9885372 DO https://doi.org/10.1109/ICESC54411.2022.9885372 SF ELIB - SuUB Bremen
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