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1 Ergebnisse
1
Mechanism of HfO2-FeFET Memory Operation Revealed by Quanti..:
, In:
2022 IEEE Silicon Nanoelectronics Workshop (SNW)
,
Ichihara, Reika
;
Higashi, Yusuke
;
Suzuki, Kunifumi
... - p. 1-2 , 2022
Link:
https://doi.org/10.1109/SNW56633.2022.9889039
RT T1
2022 IEEE Silicon Nanoelectronics Workshop (SNW)
: T1
Mechanism of HfO2-FeFET Memory Operation Revealed by Quantitative Analysis of Spontaneous Polarization and Trap Charge
UL https://suche.suub.uni-bremen.de/peid=ieee-9889039&Exemplar=1&LAN=DE A1 Ichihara, Reika A1 Higashi, Yusuke A1 Suzuki, Kunifumi A1 Kusai, Haruka A1 Yoshimura, Yoko A1 Hamai, Takamasa A1 Kamiya, Yuta A1 Takahashi, Kota A1 Matsuo, Kazuhiro A1 Nakasaki, Yasushi A1 Miyagawa, Hidenori A1 Suzuki, Masamichi A1 Sakuma, Kiwamu A1 Kamimuta, Yuuichi A1 Saitoh, Masumi YR 2022 SN 2161-4644 K1 Statistical analysis K1 Conferences K1 Silicon K1 Iron K1 Hafnium compounds K1 FeFETs K1 Nanoelectronics K1 FeFET K1 HfO2 K1 memory K1 polarization K1 charge-trap SP 1 OP 2 LK http://dx.doi.org/https://doi.org/10.1109/SNW56633.2022.9889039 DO https://doi.org/10.1109/SNW56633.2022.9889039 SF ELIB - SuUB Bremen
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