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1 Ergebnisse
1
An Evaluation for Quality Inspection of Epitaxial Layer and..:
, In:
2022 IEEE 34th International Conference on Microelectronic Test Structures (ICMTS)
,
Chu, Kuan-Wei
;
Tseng, Chun-Wei
;
Tsui, Bing-Yue
... - p. 1-4 , 2022
Link:
https://doi.org/10.1109/ICMTS50340.2022.9898247
RT T1 <cTitle>2022 IEEE 34th International Conference on Microelectronic Test Structures (ICMTS)</cTitle>: T1 <Title>An Evaluation for Quality Inspection of Epitaxial Layer and Heavily-doped 4H-SiC Substrate by Simple Schottky Barrier Diode and MOS Capacitor</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9898247&Exemplar=1&LAN=DE A1 Chu, Kuan-Wei A1 Tseng, Chun-Wei A1 Tsui, Bing-Yue A1 Wu, Yew-Chung Sermon A1 Yang, Cheng-Juei A1 Hsu, Chuck YR 2022 SN 2158-1029 K1 Schottky diodes K1 Silicon carbide K1 Epitaxial layers K1 Schottky barriers K1 MOS capacitors K1 Inspection K1 Microelectronics K1 SiC K1 defects K1 Schottky barrier diode K1 MOS capacitor SP 1 OP 4 LK http://dx.doi.org/https://doi.org/10.1109/ICMTS50340.2022.9898247 DO https://doi.org/10.1109/ICMTS50340.2022.9898247 SF ELIB - SuUB Bremen
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