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Enhanced gain characteristics of AlGaN/GaN MOS-HEMTs with A..:

, In: 2021 IEEE International Meeting for Future Electron Devices, Kansai (IMFEDK),
Shibata, K. ; Herbert, K. ; Kuzuhara, M.... - p. 1-2 , 2021
Link: https://doi.org/10.1109/IMFEDK53601.2021.9904016