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1 Ergebnisse
1
Post-CMOS Devices: Landau's Anisotropy Sensitivity Analyses..:
, In:
2022 IEEE Latin American Electron Devices Conference (LAEDC)
,
Singh, Khoirom Johnson
;
Acharya, Lomash Chandra
;
Dargupally, Mahipal
.. - p. 1-4 , 2022
Link:
https://doi.org/10.1109/LAEDC54796.2022.9908182
RT T1
2022 IEEE Latin American Electron Devices Conference (LAEDC)
: T1
Post-CMOS Devices: Landau's Anisotropy Sensitivity Analyses for Organic Ferroelectric Gate Stack and Its Application to NCTFET
UL https://suche.suub.uni-bremen.de/peid=ieee-9908182&Exemplar=1&LAN=DE A1 Singh, Khoirom Johnson A1 Acharya, Lomash Chandra A1 Dargupally, Mahipal A1 Bulusu, Anand A1 Dasgupta, Sudeb YR 2022 K1 Semiconductor device modeling K1 Anisotropic magnetoresistance K1 Sensitivity analysis K1 Computational modeling K1 Voltage K1 Conductivity K1 Capacitance K1 Landau-Khalatnikov model K1 negative capacitance effect K1 NC tunnel field-effect transistor K1 organic ferroelectric K1 post-CMOS K1 Preisach model SP 1 OP 4 LK http://dx.doi.org/https://doi.org/10.1109/LAEDC54796.2022.9908182 DO https://doi.org/10.1109/LAEDC54796.2022.9908182 SF ELIB - SuUB Bremen
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