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Impact of Oxide Thickness Fluctuation for Resist- and Space..:
, In:
2022 IEEE Latin American Electron Devices Conference (LAEDC)
,
Rathore, Rituraj S.
;
Rana, Ashwani K.
;
Srivastava, Viranjay M.
- p. 1-4 , 2022
Link:
https://doi.org/10.1109/LAEDC54796.2022.9908194
RT T1
2022 IEEE Latin American Electron Devices Conference (LAEDC)
: T1
Impact of Oxide Thickness Fluctuation for Resist- and Spacer-Defined FinFETs
UL https://suche.suub.uni-bremen.de/peid=ieee-9908194&Exemplar=1&LAN=DE A1 Rathore, Rituraj S. A1 Rana, Ashwani K. A1 Srivastava, Viranjay M. YR 2022 K1 Performance evaluation K1 Fluctuations K1 Very large scale integration K1 Logic gates K1 FinFETs K1 Nanoscale devices K1 Microelectronics K1 FinFET K1 Resist-defined K1 Spacer-defined K1 Oxide thickness variation K1 Nanotechnology K1 VLSI SP 1 OP 4 LK http://dx.doi.org/https://doi.org/10.1109/LAEDC54796.2022.9908194 DO https://doi.org/10.1109/LAEDC54796.2022.9908194 SF ELIB - SuUB Bremen
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