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1 Ergebnisse
1
Parameter extraction in a 65nm nMOSFET technology from 300 ..:
, In:
2022 IEEE Latin American Electron Devices Conference (LAEDC)
,
Lopez-L, O.
;
Martinez-R, I.
;
Durini, D.
... - p. 1-4 , 2022
Link:
https://doi.org/10.1109/LAEDC54796.2022.9908221
RT T1
2022 IEEE Latin American Electron Devices Conference (LAEDC)
: T1
Parameter extraction in a 65nm nMOSFET technology from 300 K down to 3.8 K
UL https://suche.suub.uni-bremen.de/peid=ieee-9908221&Exemplar=1&LAN=DE A1 Lopez-L, O. A1 Martinez-R, I. A1 Durini, D. A1 Ferrusca, D. A1 Gutierrez-D, Edmundo A. A1 Ortiz-Conde, Adelmo YR 2022 K1 Resistance K1 Temperature measurement K1 Degradation K1 Semiconductor device modeling K1 MOSFET K1 Temperature distribution K1 MOSFET circuits K1 Cryogenic electronics K1 Cryo-CMOS K1 Electrical Characterization K1 MOSFET model parameter extraction K1 parasitic series resistance K1 mobility degradation K1 carrier velocity saturation SP 1 OP 4 LK http://dx.doi.org/https://doi.org/10.1109/LAEDC54796.2022.9908221 DO https://doi.org/10.1109/LAEDC54796.2022.9908221 SF ELIB - SuUB Bremen
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