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Physical origin of the permanent components of the positive..:
, In:
2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
,
Palumbo, Felix
;
Klebanov, Maxim
;
Monreal, Gerardo
. - p. 1-5 , 2022
Link:
https://doi.org/10.1109/IPFA55383.2022.9915732
RT T1
2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
: T1
Physical origin of the permanent components of the positive charge buildup resulting from NBTI/PBTI stress in nMOS/pMOS transistors
UL https://suche.suub.uni-bremen.de/peid=ieee-9915732&Exemplar=1&LAN=DE A1 Palumbo, Felix A1 Klebanov, Maxim A1 Monreal, Gerardo A1 Chetlur, Sundar YR 2022 SN 1946-1550 K1 Temperature measurement K1 Integrated circuits K1 Temperature distribution K1 Photonic band gap K1 Hydrogen K1 Failure analysis K1 Energy measurement K1 Bias Temperature Instability K1 gate oxide reliability K1 interface defects SP 1 OP 5 LK http://dx.doi.org/https://doi.org/10.1109/IPFA55383.2022.9915732 DO https://doi.org/10.1109/IPFA55383.2022.9915732 SF ELIB - SuUB Bremen
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