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1
The Failure Mechanism of the Guard-Rings in Two Different P..:
, In:
2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
,
Lee, Jian-Hsing
;
Lin, Chih-Hsuan
;
Nidhi, Karuna
... - p. 1-5 , 2022
Link:
https://doi.org/10.1109/IPFA55383.2022.9915775
RT T1 <cTitle>2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)</cTitle>: T1 <Title>The Failure Mechanism of the Guard-Rings in Two Different Power Domains during the Latch-Up Test</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9915775&Exemplar=1&LAN=DE A1 Lee, Jian-Hsing A1 Lin, Chih-Hsuan A1 Nidhi, Karuna A1 Chen, Chao-Yang A1 Jou, Yeh-Ning A1 Ker, Ming-Dou YR 2022 SN 1946-1550 K1 Resistors K1 Electric potential K1 Simulation K1 Failure analysis K1 Modulation K1 Voltage K1 High-voltage techniques K1 Positive Trigger-Current K1 Latch-Up Test K1 Guard-Ring K1 Bipolar CMOS DMOS (BCD) SP 1 OP 5 LK http://dx.doi.org/https://doi.org/10.1109/IPFA55383.2022.9915775 DO https://doi.org/10.1109/IPFA55383.2022.9915775 SF ELIB - SuUB Bremen
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