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1 Ergebnisse
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Development and RF-Performance of AlGaN/GaN and InAlN/GaN H..:
, In:
2022 17th European Microwave Integrated Circuits Conference (EuMIC)
,
Moser, M.
;
Pradhan, M.
;
Alomari, M.
... - p. 80-83 , 2022
Link:
https://doi.org/10.23919/EuMIC54520.2022.9923525
RT T1 <cTitle>2022 17th European Microwave Integrated Circuits Conference (EuMIC)</cTitle>: T1 <Title>Development and RF-Performance of AlGaN/GaN and InAlN/GaN HEMTs on Large-Diameter High-Resistivity Silicon Substrates</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9923525&Exemplar=1&LAN=DE A1 Moser, M. A1 Pradhan, M. A1 Alomari, M. A1 Schoch, B. A1 Sharma, K. A1 Kallfass, I. A1 Garcia-Luque, A. A1 Martin-Guerrero, T. M. A1 Burghartz, J. N. YR 2022 K1 Semiconductor device modeling K1 Aluminum K1 HEMTs K1 Silicon K1 Wide band gap semiconductors K1 Scattering parameters K1 Transistors K1 Aluminium Gallium Nitride (AlGaN) K1 Indium Aluminium Nitride (InAlN) K1 High Resistivity Silicon (HR-Si) K1 High-Electron Mobility Transistor (HEMT) and Large-Diameter SP 80 OP 83 LK http://dx.doi.org/https://doi.org/10.23919/EuMIC54520.2022.9923525 DO https://doi.org/10.23919/EuMIC54520.2022.9923525 SF ELIB - SuUB Bremen
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