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1 Ergebnisse
1
Hysteresis Associated with Intrinsic-Oxide Traps in Gate-Tu..:
, In:
2022 IEEE 22nd International Conference on Nanotechnology (NANO)
,
Kurtash, Vladislav
;
Mathew, Sobin
;
Thiele, Sebastian
... - p. 527-530 , 2022
Link:
https://doi.org/10.1109/NANO54668.2022.9928717
RT T1 <cTitle>2022 IEEE 22nd International Conference on Nanotechnology (NANO)</cTitle>: T1 <Title>Hysteresis Associated with Intrinsic-Oxide Traps in Gate-Tunable Tetrahedral CVD-MoS2 Memristor</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9928717&Exemplar=1&LAN=DE A1 Kurtash, Vladislav A1 Mathew, Sobin A1 Thiele, Sebastian A1 Scheler, Theresa A1 Reiprich, Johannes A1 Hahnlein, Bernd A1 Stauffenberg, Jaqueline A1 Manske, Eberhard A1 Narasimha, Shilpashree A1 Abedin, Saadman A1 Jacobs, Heiko O. A1 Pezoldt, Jorg YR 2022 SN 1944-9380 K1 Grain boundaries K1 Performance evaluation K1 Electron traps K1 Computational modeling K1 Memristors K1 Logic gates K1 Data models K1 Memristor K1 charge trapping K1 neuromorphic computing K1 2D transitional metal dichalcogenides (MX2) SP 527 OP 530 LK http://dx.doi.org/https://doi.org/10.1109/NANO54668.2022.9928717 DO https://doi.org/10.1109/NANO54668.2022.9928717 SF ELIB - SuUB Bremen
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