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1 Ergebnisse
1
Characterization Technique for Interface Traps in Si Nanosh..:
, In:
2022 IEEE 22nd International Conference on Nanotechnology (NANO)
,
Yoo, Han Bin
;
Kim, Haesung
;
Lee, Yongwoo
... - p. 116-119 , 2022
Link:
https://doi.org/10.1109/NANO54668.2022.9928778
RT T1 <cTitle>2022 IEEE 22nd International Conference on Nanotechnology (NANO)</cTitle>: T1 <Title>Characterization Technique for Interface Traps in Si Nanosheet GAA MOSFETs through Subthreshold I-V Characteristics</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9928778&Exemplar=1&LAN=DE A1 Yoo, Han Bin A1 Kim, Haesung A1 Lee, Yongwoo A1 Ryu, Ji Hee A1 Park, Ju Young A1 Yang, Hyo Jin A1 Bae, Jong-Ho A1 Kim, Dae Hwan A1 Choi, Sung-Jin A1 Kim, Dong Myong YR 2022 SN 1944-9380 K1 MOSFET K1 Current measurement K1 Gallium arsenide K1 Semiconductor device reliability K1 Logic gates K1 Size measurement K1 Silicon SP 116 OP 119 LK http://dx.doi.org/https://doi.org/10.1109/NANO54668.2022.9928778 DO https://doi.org/10.1109/NANO54668.2022.9928778 SF ELIB - SuUB Bremen
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