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1 Ergebnisse
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Investigation of normally-OFF AlGaN/GaN MIS-HEMTs with Al2O..:
, In:
2022 International Conference on IC Design and Technology (ICICDT)
,
Duan, Jiachen
;
Zhang, Yuanlei
;
Liang, Ye
.. - p. 89-92 , 2022
Link:
https://doi.org/10.1109/ICICDT56182.2022.9933099
RT T1
2022 International Conference on IC Design and Technology (ICICDT)
: T1
Investigation of normally-OFF AlGaN/GaN MIS-HEMTs with Al2O3/ZrOx/Al2O3 charge trapping layer
UL https://suche.suub.uni-bremen.de/peid=ieee-9933099&Exemplar=1&LAN=DE A1 Duan, Jiachen A1 Zhang, Yuanlei A1 Liang, Ye A1 Cai, Yutao A1 Liu, Wen YR 2022 SN 2691-0462 K1 Current measurement K1 Capacitance-voltage characteristics K1 Bidirectional control K1 Logic gates K1 Dielectric measurement K1 Wide band gap semiconductors K1 Dielectrics K1 GaN K1 MIS-HEMTs K1 normally-OFF K1 ZrOx K1 Al2O3 SP 89 OP 92 LK http://dx.doi.org/https://doi.org/10.1109/ICICDT56182.2022.9933099 DO https://doi.org/10.1109/ICICDT56182.2022.9933099 SF ELIB - SuUB Bremen
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