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1 Ergebnisse
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Analysis of 1st & 3rd Quadrant Electrothermal Robustness of..:
, In:
2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe)
,
Hosseinzadehlish, Mana
;
Jahdi, Saeed
;
Yuan, Xibo
... - p. 1-6 , 2022
Link:
https://doi.org/10.1109/WiPDAEurope55971.2022.9936556
RT T1
2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe)
: T1
Analysis of 1st & 3rd Quadrant Electrothermal Robustness of Symmetrical and Asymmetrical Double- Trench SiC Power MOSFETs Under UIS
UL https://suche.suub.uni-bremen.de/peid=ieee-9936556&Exemplar=1&LAN=DE A1 Hosseinzadehlish, Mana A1 Jahdi, Saeed A1 Yuan, Xibo A1 Shen, Chengjun A1 Gunaydin, Yasin A1 Laird, Ian A1 Alatise, Olayiwola A1 Ortiz-Gonzalez, Jose YR 2022 K1 Temperature measurement K1 MOSFET K1 Temperature distribution K1 Silicon carbide K1 Pulse measurements K1 Europe K1 Switches K1 SiC MOSFET K1 Reverse recovery K1 body diode K1 avalanche breakdown K1 electrothermal ruggedness SP 1 OP 6 LK http://dx.doi.org/https://doi.org/10.1109/WiPDAEurope55971.2022.9936556 DO https://doi.org/10.1109/WiPDAEurope55971.2022.9936556 SF ELIB - SuUB Bremen
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