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1 Ergebnisse
1
An 8T/Cell FeFET-Based Nonvolatile SRAM with Improved Densi..:
, In:
2022 IEEE International Symposium on Circuits and Systems (ISCAS)
,
Wang, Jianfeng
;
Xiu, Nuo
;
Wu, Juejian
... - p. 3408-3412 , 2022
Link:
https://doi.org/10.1109/ISCAS48785.2022.9937438
RT T1 <cTitle>2022 IEEE International Symposium on Circuits and Systems (ISCAS)</cTitle>: T1 <Title>An 8T/Cell FeFET-Based Nonvolatile SRAM with Improved Density and Sub-fJ Backup and Restore Energy</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9937438&Exemplar=1&LAN=DE A1 Wang, Jianfeng A1 Xiu, Nuo A1 Wu, Juejian A1 Chen, Yiming A1 Sun, Yanan A1 Yang, Huazhong A1 Narayanan, Vijaykrishnan A1 George, Sumitha A1 Li, Xueqing YR 2022 SN 2158-1525 K1 Technological innovation K1 Nonvolatile memory K1 Circuits and systems K1 Memory management K1 Random access memory K1 Transistors K1 FeFETs K1 Ferroelectric FET (FeFET) K1 nonvolatile SRAM (nvSRAM) K1 nonvolatile memory (NVM) K1 SRAM K1 power gating K1 intermittent computing SP 3408 OP 3412 LK http://dx.doi.org/https://doi.org/10.1109/ISCAS48785.2022.9937438 DO https://doi.org/10.1109/ISCAS48785.2022.9937438 SF ELIB - SuUB Bremen
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