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1 Ergebnisse
1
Characterization of Single Event Upsets of Nanoscale FDSOI ..:
, In:
2022 IEEE International Symposium on Circuits and Systems (ISCAS)
,
Ding, Luchang
;
Cai, Chang
;
Chen, Gengsheng
... - p. 2281-2285 , 2022
Link:
https://doi.org/10.1109/ISCAS48785.2022.9937652
RT T1 <cTitle>2022 IEEE International Symposium on Circuits and Systems (ISCAS)</cTitle>: T1 <Title>Characterization of Single Event Upsets of Nanoscale FDSOI Circuits Based on the Simulation and Irradiation Results</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9937652&Exemplar=1&LAN=DE A1 Ding, Luchang A1 Cai, Chang A1 Chen, Gengsheng A1 Wu, Zehao A1 Zhang, Jing A1 Wu, Chang A1 Yu, Jun YR 2022 SN 2158-1525 K1 Resistance K1 Radiation effects K1 Analytical models K1 Sensitivity K1 Single event upsets K1 Silicon-on-insulator K1 Random access memory K1 Fully-depleted silicon-on-insulator K1 single event upset K1 radiation tolerance K1 static random-access memory SP 2281 OP 2285 LK http://dx.doi.org/https://doi.org/10.1109/ISCAS48785.2022.9937652 DO https://doi.org/10.1109/ISCAS48785.2022.9937652 SF ELIB - SuUB Bremen
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